公开(公告)号：US20180278050A1

公开(公告)日：2018-09-27

申请号：US15800263

申请日：2017-11-01

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Philippe Rabier

IPC: H02H9/04 ,  H02H7/18 ,  H02J7/00

CPC classification number: H02H9/04 ,  B60L1/00 ,  B60L3/0046 ,  H01L27/0255 ,  H01L27/0262 ,  H02H7/18 ,  H02H9/041 ,  H02J7/0029 ,  H02J7/0034

Abstract: In some embodiments, a device includes, in series: a bidirectional diode having a breakdown voltage that is higher than or equal to the supply voltage; and a unidirectional diode having a breakdown voltage that is higher than or equal to the supply voltage. One of the diodes is an avalanche diode and the other is a Shockley diode.