公开(公告)号：US20250043460A1

公开(公告)日：2025-02-06

申请号：US18779699

申请日：2024-07-22

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Cateno Marco CAMALLERI ,  Mario Giuseppe SAGGIO ,  Alfio GUARNERA ,  Alessia Maria FRAZZETTO

IPC: C30B25/20 ,  C30B29/36 ,  C30B33/08 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A manufacturing process vertical-conduction power device includes: from a layer containing semiconductor material with a lattice structure having spatial symmetry, growing an epitaxial layer, having the lattice structure with spatial symmetry and a first electrical conductivity; forming body having regions a second electrical conductivity, opposite to the first electrical conductivity, in the epitaxial layer; and forming a current-spreading layer in the epitaxial layer between the body regions. Forming the body regions includes carrying out a body channeling ion implantation, using a body mask. Forming the current-spreading layer includes: forming shallow damaged regions in the body regions through the body mask so that the lattice structure is altered in the shallow damaged regions; and carrying out a current-spreading channeling ion implantation, using the shallow damaged regions as implantation mask.