公开(公告)号：US20030227329A1

公开(公告)日：2003-12-11

申请号：US10325589

申请日：2002-12-20

Applicant: STMICROELECTRONICS S.A.

Inventor： Jean-Charles Grasset ,  Frederic Bossu

IPC: H03G003/10

CPC classification number: H03F1/302 ,  H03F2200/372

Abstract: A biasing device includes closed-loop transconductance slaving circuit, able to slave the time average of the base/emitter or gate/source voltage of the amplifier transistor (Q1) to a reference voltage corresponding to a desired quiescent current for the transistor. Moreover, viewed from the base or gate of the amplifier transistor (Q1), the impedance of the base/emitter or gate/source circuit is small at low frequency, and large with respect to the impedance of the radio frequency source within the radio frequency range of the signal. The device can be incorporated in a mobile terminal, such as a cellular mobile phone.

Abstract translation: 偏置装置包括闭环跨导从动电路，其能够将放大器晶体管（Q1）的基极/发射极或栅极/源极电压的时间平均值与对应于晶体管的期望静态电流的参考电压相关联。 此外，从放大晶体管（Q1）的基极或栅极观察，基极/发射极或栅极/源极电路的阻抗在低频时较小，相对于射频内的射频源的阻抗较大 信号范围。 该装置可以结合在诸如蜂窝移动电话的移动终端中。