公开(公告)号：US20030227329A1

公开(公告)日：2003-12-11

申请号：US10325589

申请日：2002-12-20

Applicant: STMICROELECTRONICS S.A.

Inventor： Jean-Charles Grasset ,  Frederic Bossu

IPC: H03G003/10

CPC classification number: H03F1/302 ,  H03F2200/372

Abstract: A biasing device includes closed-loop transconductance slaving circuit, able to slave the time average of the base/emitter or gate/source voltage of the amplifier transistor (Q1) to a reference voltage corresponding to a desired quiescent current for the transistor. Moreover, viewed from the base or gate of the amplifier transistor (Q1), the impedance of the base/emitter or gate/source circuit is small at low frequency, and large with respect to the impedance of the radio frequency source within the radio frequency range of the signal. The device can be incorporated in a mobile terminal, such as a cellular mobile phone.

Abstract translation: 偏置装置包括闭环跨导从动电路，其能够将放大器晶体管（Q1）的基极/发射极或栅极/源极电压的时间平均值与对应于晶体管的期望静态电流的参考电压相关联。 此外，从放大晶体管（Q1）的基极或栅极观察，基极/发射极或栅极/源极电路的阻抗在低频时较小，相对于射频内的射频源的阻抗较大 信号范围。 该装置可以结合在诸如蜂窝移动电话的移动终端中。

公开(公告)号：US20030006836A1

公开(公告)日：2003-01-09

申请号：US10124670

申请日：2002-04-17

Applicant: STMicroelectronics S.A.

Inventor： Bruno Pellat ,  Jean-Charles Grasset

IPC: G06G007/12

CPC classification number: H03F1/32 ,  H03F1/3211 ,  H03F2200/372

Abstract: A transconductance stage includes at least one principal bipolar transistor having a base linked to an input terminal, a collector linked to an output terminal, and an emitter linked to a supply terminal through a resistor. At least one bipolar compensation transistor is connected in parallel to the principal transistor and linked without going through the resistor to the supply terminal. The value RE of the resistance is chosen so that RE*I0>VT/2, where VT is the thermal voltage and I0 is the quiescent current of the principal transistor.

Abstract translation: 跨导级包括至少一个主要双极晶体管，其具有连接到输入端子的基极，连接到输出端子的集电极和通过电阻器连接到电源端子的发射极。 至少一个双极性补偿晶体管与主晶体管并联连接，而不通过电阻器连接到电源端子。 选择电阻的值RE，使得RE * I0> VT / 2，其中VT是热电压，I0是主晶体管的静态电流。