公开(公告)号：US20020187435A1

公开(公告)日：2002-12-12

申请号：US10114428

申请日：2002-04-02

Applicant: STMICROELECTRONICS S.A.

Inventor： Serdar Manakli ,  Yorick Trouillet

IPC: G03F007/20

CPC classification number: G03F7/70466

Abstract: A method of illuminating a layer of a material, in particular a photosensitive resin, using a light source, in order to expose an area of that material to a useful dose of light for subsequent etching of that material in that area, consisting in effecting a first exposure through a pattern of a first mask made up of a central hole and peripheral holes with a first dose of light less than said useful dose, and a second exposure through a pattern of a second mask made up of a single hole with a second dose of light such that the cumulative total of said first dose induced through the central hole of the first mask and the second dose induced through the single hole of said second mask produces at least said useful dose over said area.

Abstract translation: 使用光源照射材料层，特别是感光树脂的方法，以便将该材料的区域暴露于有用剂量的光，以便随后蚀刻该区域中的该材料，该方法包括： 通过由中心孔和外围孔构成的第一掩模的图案，其具有小于所述有用剂量的第一剂量的光的第一次曝光，以及通过由单个孔构成的第二掩模的图案的第二次曝光与第二次 使得通过第一掩模的中心孔诱导的所述第一剂量的累积总和通过所述第二掩模的单个孔诱导的第二剂量在所述区域上产生至少所述有用剂量。