公开(公告)号：US20130264949A1

公开(公告)日：2013-10-10

申请号：US13802081

申请日：2013-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore Leonardi ,  Maria Eloisa Castagna ,  Anna Muscara

IPC: H01L31/11 ,  H05B37/02

CPC classification number: H01L31/11 ,  H01L27/1443 ,  H01L31/02165 ,  H05B37/0218

Abstract: An embodiment relates to a sensor being integrated on a semiconductor substrate and comprising at least a vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate, as well as at least an anti-reflection coating formed on said photodiode. Said at least one anti-reflection coating comprises at least one first and one second different anti-reflection layer being suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an incident optical signal on said sensor. An embodiment also relates to an integration process of such a sensor, as well as to an ambient light sensor made by means of such a sensor.

Abstract translation: 一个实施例涉及集成在半导体衬底上并包括至少一个垂直双结光电二极管的传感器，其又包括形成在所述半导体衬底中的至少一个第一和一个第二pn结，以及至少一个抗反射 在所述光电二极管上形成的涂层。 所述至少一个防反射涂层包括至少一个第一和第二不同的抗反射层，适合于获得与所述传感器上的入射光信号的预定波长对应的响应峰。 实施例还涉及这种传感器的集成过程，以及通过这种传感器制造的环境光传感器。