公开(公告)号：US12132059B2

公开(公告)日：2024-10-29

申请号：US17722232

申请日：2022-04-15

申请人： Phion Technologies Corp.

发明人： Jonathan Nydell ,  Steve Laver

IPC分类号： H04B10/114 ,  G02B19/00 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/054 ,  H01L31/068 ,  H01L31/075 ,  H01L31/077 ,  H01L31/109 ,  H02J7/00 ,  H02J7/34 ,  H02J50/30 ,  H02J50/40 ,  H02J50/80 ,  H02J50/90 ,  H04B10/112 ,  H04B10/40 ,  H04B10/50 ,  H04B10/61 ,  H04B10/80 ,  H01L25/16 ,  H01L31/0216 ,  H01L31/024 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0475 ,  H01L31/052

CPC分类号： H01L27/1443 ,  G02B19/0028 ,  G02B19/009 ,  H01L31/02024 ,  H01L31/0224 ,  H01L31/0547 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/077 ,  H01L31/109 ,  H02J7/00032 ,  H02J7/0048 ,  H02J7/345 ,  H02J50/30 ,  H02J50/40 ,  H02J50/80 ,  H02J50/90 ,  H04B10/1123 ,  H04B10/1143 ,  H04B10/40 ,  H04B10/502 ,  H04B10/503 ,  H04B10/61 ,  H04B10/616 ,  H04B10/807 ,  H01L25/167 ,  H01L31/02161 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/024 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/0352 ,  H01L31/0475 ,  H01L31/052 ,  H02J7/00

摘要： A method of coordinating wireless power transfer and data communication between a transmitter and a receiver comprising recognizing at the receiver that an energy store electrically coupled to the receiver requires an electrical charge, emitting from the receiver a beacon signal to the transmitter, the beacon signal including information about the receiver and a state of charge of the energy store, recognizing at the receiver first and second localization signals from the transmitter, establishing low-power and high-power laser beam connections between the receiver and the transmitter in response to the localization signals, and communicating further information via the low-power beam on a periodic basis while optical power is being transferred via the high-power beam. The low-power beam connection includes further information about the receiver and the state of charge of the energy store. Optical power is transferred from the transmitter to the receiver via the high-power beam.

公开(公告)号：US12087780B2

公开(公告)日：2024-09-10

申请号：US17288316

申请日：2019-09-27

申请人： ams International AG

发明人： Franz Lechner

IPC分类号： H01L27/144 ,  H01L31/0216

CPC分类号： H01L27/1443 ,  H01L31/02164

摘要： An optical sensor device comprises a semiconductor body with a light-sensitive area, metal layers which are arranged above the light-sensitive area and comprise an upper metal layer and a lower metal layer, wherein the upper metal layer is located at a greater distance from the light-sensitive area than the lower metal layer. The optical sensor device further comprises an aperture opening in the metal layers above the light-sensitive area and a via structure, which is arranged outside the aperture opening and interconnects the metal layers and/or the semiconductor body. The via structure is arranged in such a fashion that any straight line that is parallel to the light-sensitive area and traverses the aperture opening between the light-sensitive area and the upper metal layer is limited in both of its opposite directions by the via structure.

公开(公告)号：US20240234190A9

公开(公告)日：2024-07-11

申请号：US18546715

申请日：2022-02-22

申请人： VueReal Inc.

发明人： Gholamreza CHAJI ,  Ehsanollah FATHI ,  Hossein Zamani SIBONI ,  Dana Saud Yousef AYYASH

IPC分类号： H01L21/683 ,  H01L21/67 ,  H01L25/00 ,  H01L27/144

CPC分类号： H01L21/6835 ,  H01L21/67144 ,  H01L25/50 ,  H01L27/1443 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68363

摘要： The present disclosure relates to transfer of a selected set of microdevices from a donor substrate to a receiver/system substrate while there can be already microdevices transferred in the system substrate. In particular the invention deals with pads with a hard base and soft shell. In addition, use of a stage to facilitate the microdevice transfer is detailed.

公开(公告)号：US20240186338A1

公开(公告)日：2024-06-06

申请号：US17759371

申请日：2022-07-07

申请人： SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

发明人： Zhitao Lu

IPC分类号： H01L27/144

CPC分类号： H01L27/1443

摘要： A display panel and a mobile terminal are provided. A photosensitive module of the display panel includes a photosensitive transistor and a light-concentrating structure. A first active layer of the photosensitive transistor includes a first channel portion. A first source-drain electrode layer is disposed on the first active portion which is disposed on two sides of the first channel portion. The light-concentrating structure includes at least one protrusion protruded along a direction that the photosensitive transistor away from a substrate of the display panel. In a direction of a top view of the display panel, the light-concentrating structure covers at least the first channel portion of the first active layer.

公开(公告)号：US20240170505A1

公开(公告)日：2024-05-23

申请号：US17777422

申请日：2021-05-31

申请人： Beijing BOE Technology Development Co., Ltd. ,  BOE Technology Group Co., Ltd.

发明人： Fanli MENG ,  Zeyuan LI ,  Jiangbo CHEN ,  Ding DING

IPC分类号： H01L27/144 ,  H01L23/31 ,  H01L27/092 ,  H01L27/12

CPC分类号： H01L27/1443 ,  H01L23/3171 ,  H01L27/0922 ,  H01L27/1259

摘要： The present disclosure relates to an X-RAY detector including a base substrate and a plurality of detection units arranged on the base substrate. Each detection unit includes a light conversion element and a switching transistor, the light conversion element is configured to convert an optical signal into an electrical signal, and the switching transistor is configured to output the electrical signal to a reading signal line. Each detection unit further includes a radiation shielding structure located at a light-entering side of the detection unit, and an orthogonal projection of the radiation shielding structure onto the base substrate fully covers an orthogonal projection of the switching transistor onto the base substrate. The present disclosure further relates to a method for forming the X-RAY detector.

公开(公告)号：US11961853B2

公开(公告)日：2024-04-16

申请号：US17298630

申请日：2021-05-28

申请人： Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

发明人： Haijun Wang

IPC分类号： G06F3/042 ,  G02F1/1335 ,  H01L27/144

CPC分类号： H01L27/1443 ,  G02F1/133514 ,  G06F3/042

摘要： A color filter substrate and a manufacturing method thereof are provided. A plurality of grating structures, a sensor unit and a switch unit are integrated on the color filter substrate. As such, in addition to an original light-filtering function, the color filter substrate is given functions of polarizing light rays and sensing light rays.

公开(公告)号：US20240072182A1

公开(公告)日：2024-02-29

申请号：US18503148

申请日：2023-11-06

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： KI JUNE LEE ,  JUNG HA SON ,  TAE SUNG KIM ,  JAE IK LIM ,  HYUN MIN CHO

IPC分类号： H01L31/0216 ,  H01L27/144 ,  H01L27/146

CPC分类号： H01L31/02161 ,  H01L27/1443 ,  H01L27/14678 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14625

摘要： An optical sensor includes a substrate, a photoelectric element disposed on the substrate and that includes a first electrode, an intermediate layer disposed on the first electrode, and a second electrode disposed on the intermediate layer, a barrier layer disposed on the second electrode, an insulating layer that covers the photoelectric element and the barrier layer, and a bias electrode disposed on the insulating layer and electrically connected to the second electrode. The barrier layer is spaced apart from the first electrode.

公开(公告)号：US20230402330A1

公开(公告)日：2023-12-14

申请号：US18230664

申请日：2023-08-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Feng-Chien Hsieh ,  Kuo-Cheng Lee ,  Yun-Wei Cheng ,  Chun-Hao Lin ,  Ting-Hao Chang

IPC分类号： H01L21/66 ,  H01L21/265 ,  H01L27/144

CPC分类号： H01L22/20 ,  H01L21/265 ,  H01L22/30 ,  H01L22/22 ,  H01L27/1443

摘要： A method of manufacturing a semiconductor wafer is disclosed. The method includes exposing the semiconductor wafer to one or more dopant species to form one or more first implant layers on the semiconductor wafer, testing one or more geometric parameter values of the formed one or more first implant layers, after testing the one or more geometric parameter values, conditionally exposing the semiconductor wafer to one or more dopant species to form one or more additional implant layers on the semiconductor wafer, after forming the one or more additional implant layers, conditionally forming one or more additional circuit layers on the semiconductor wafer to form a plurality of functional electronic circuits on the semiconductor wafer, and conditionally testing the semiconductor wafer with a wafer acceptance test (WAT) operation.

公开(公告)号：US11818911B2

公开(公告)日：2023-11-14

申请号：US16973161

申请日：2020-03-04

申请人： BOE Technology Group Co., Ltd.

发明人： Feng Liao ,  Yunsik Im ,  Yoonsung Um ,  Shunhang Zhang ,  Liwei Liu ,  Hongrun Wang ,  Hui Zhang ,  Yue Jia ,  Kai Hou

IPC分类号： H10K50/822 ,  H01L25/18 ,  H01L25/16 ,  H10K50/826 ,  H10K59/13 ,  H10K59/60 ,  H01L27/144 ,  H10K59/122 ,  H10K59/12

CPC分类号： H10K50/822 ,  H01L25/167 ,  H01L25/18 ,  H10K50/826 ,  H10K59/13 ,  H10K59/60 ,  H01L27/1443 ,  H10K59/1201 ,  H10K59/122

摘要： The disclosure provides a display substrate and a manufacturing method thereof, a display panel and a display apparatus. The display substrate includes a substrate and an electroluminescent layer on the substrate. The display substrate further includes a first reflective electrode layer, a buffer layer and a second reflective electrode layer sequentially formed on a side of the electroluminescent layer distal to the substrate. The buffer layer is provided with a first hollow region, the second reflective electrode layer is provided with a second hollow region, an overlapping region between the first hollow region and the second hollow region is configured to transmit light emitted by the electroluminescent layer. The present disclosure can detect the light-emitting brightness of each sub-pixel in the organic electroluminescent layer in real time to improve light-emitting efficiency.

公开(公告)号：US11764236B2

公开(公告)日：2023-09-19

申请号：US17877214

申请日：2022-07-29

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Tomoya Taguchi ,  Yuki Yoshida ,  Katsumi Shibayama

IPC分类号： H01L27/146 ,  H01L27/144

CPC分类号： H01L27/1446 ,  H01L27/1443

摘要： A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.