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公开(公告)号：US12249624B2
公开(公告)日：2025-03-11
申请号：US17225998
申请日：2021-04-08
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Simone Rascuná , Mario Giuseppe Saggio , Giovanni Franco
IPC: H01L29/45 , H01L21/268 , H01L29/16
Abstract: A method for manufacturing a SiC-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500° C. and 2600° C. so as to form a carbon-rich electrical-contact region at the implanted region. The carbon-rich electrical-contact region forms an ohmic contact.
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公开(公告)号：US11784049B2
公开(公告)日：2023-10-10
申请号：US17190722
申请日：2021-03-03
Applicant: STMicroelectronics S.r.l.
Inventor： Simone Rascuna' , Paolo Badala' , Anna Bassi , Mario Giuseppe Saggio , Giovanni Franco
CPC classification number: H01L21/0485 , H01L21/0495 , H01L29/1608 , H01L29/45 , H01L29/47
Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.
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