公开(公告)号：US12051731B2

公开(公告)日：2024-07-30

申请号：US17698986

申请日：2022-03-18

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Patrick Fiorenza ,  Fabrizio Roccaforte ,  Mario Giuseppe Saggio

IPC: H01L29/16 ,  H01L27/06 ,  H01L29/423 ,  H01L29/872

CPC classification number: H01L29/4234 ,  H01L27/0629 ,  H01L29/1608 ,  H01L29/872

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.

公开(公告)号：US11316025B2

公开(公告)日：2022-04-26

申请号：US16882293

申请日：2020-05-22

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Patrick Fiorenza ,  Fabrizio Roccaforte ,  Mario Giuseppe Saggio

IPC: H01L29/16 ,  H01L29/872 ,  H01L27/06 ,  H01L29/423

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.