公开(公告)号：US11699748B2

公开(公告)日：2023-07-11

申请号：US17322528

申请日：2021-05-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Giuseppe Greco ,  Fabrizio Roccaforte

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L23/29 ,  H01L23/31 ,  H01L29/737 ,  H01L29/207 ,  H01L29/417

CPC classification number: H01L29/7786 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/1087 ,  H01L29/207 ,  H01L29/41766 ,  H01L29/7378

Abstract: A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.

公开(公告)号：US12051731B2

公开(公告)日：2024-07-30

申请号：US17698986

申请日：2022-03-18

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Patrick Fiorenza ,  Fabrizio Roccaforte ,  Mario Giuseppe Saggio

IPC: H01L29/16 ,  H01L27/06 ,  H01L29/423 ,  H01L29/872

CPC classification number: H01L29/4234 ,  H01L27/0629 ,  H01L29/1608 ,  H01L29/872

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.

公开(公告)号：US09711599B2

公开(公告)日：2017-07-18

申请号：US14735679

申请日：2015-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna ,  Fabrizio Roccaforte

IPC: H01L29/66 ,  H01L29/45 ,  H01L29/16 ,  H01L29/872 ,  H01L29/417 ,  H01L21/04 ,  H01L29/47 ,  H01L29/06 ,  H01L29/861

CPC classification number: H01L29/1608 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/0696 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872

Abstract: A switching device, such as a barrier junction Schottky diode, has a body of silicon carbide of a first conductivity type housing switching regions of a second conductivity type. The switching regions extend from a top surface of the body and delimit body surface portions between them. A contact metal layer having homogeneous chemical-physical characteristics extends on and in direct contact with the top surface of the body and forms Schottky contact metal portions with the surface portions of the body and ohmic contact metal portions with the switching regions. The contact metal layer is formed by depositing a nickel or cobalt layer on the body and carrying out a thermal treatment so that the metal reacts with the semiconductor material of the body and forms a silicide.

公开(公告)号：US11316025B2

公开(公告)日：2022-04-26

申请号：US16882293

申请日：2020-05-22

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Patrick Fiorenza ,  Fabrizio Roccaforte ,  Mario Giuseppe Saggio

IPC: H01L29/16 ,  H01L29/872 ,  H01L27/06 ,  H01L29/423

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.

公开(公告)号：US10566450B2

公开(公告)日：2020-02-18

申请号：US16004272

申请日：2018-06-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Giuseppe Greco ,  Fabrizio Roccaforte

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L23/29 ,  H01L23/31 ,  H01L29/737 ,  H01L29/417 ,  H01L29/207

Abstract: A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.

公开(公告)号：US11038047B2

公开(公告)日：2021-06-15

申请号：US16738935

申请日：2020-01-09

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Giuseppe Greco ,  Fabrizio Roccaforte

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L23/29 ,  H01L23/31 ,  H01L29/737 ,  H01L29/207 ,  H01L29/417

Abstract: A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.

公开(公告)号：US20150372093A1

公开(公告)日：2015-12-24

申请号：US14735679

申请日：2015-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna ,  Fabrizio Roccaforte

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/06 ,  H01L29/417 ,  H01L21/04 ,  H01L29/47 ,  H01L29/872 ,  H01L29/45

CPC classification number: H01L29/1608 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/0696 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872

Abstract: A switching device, such as a barrier junction Schottky diode, has a body of silicon carbide of a first conductivity type housing switching regions of a second conductivity type. The switching regions extend from a top surface of the body and delimit body surface portions between them. A contact metal layer having homogeneous chemical-physical characteristics extends on and in direct contact with the top surface of the body and forms Schottky contact metal portions with the surface portions of the body and ohmic contact metal portions with the switching regions. The contact metal layer is formed by depositing a nickel or cobalt layer on the body and carrying out a thermal treatment so that the metal reacts with the semiconductor material of the body and forms a silicide.

Abstract translation: 诸如势垒接合肖特基二极管的开关器件具有第一导电类型的碳化硅壳体，其具有第二导电类型的开关区域。 切换区域从主体的顶表面延伸并限定它们之间的主体表面部分。 具有均匀的化学 - 物理特性的接触金属层在主体的顶表面上延伸并直接接触，并与主体的表面部分和欧姆接触金属部分形成肖特基接触金属部分与开关区域。 接触金属层通过在体上沉积镍或钴层并进行热处理以使金属与体的半导体材料反应并形成硅化物而形成。