公开(公告)号：US20030012064A1

公开(公告)日：2003-01-16

申请号：US10176387

申请日：2002-06-20

Applicant: STMICROELECTRONICS S.r.I.

Inventor： Franco Enrico Beretta

IPC: G11C029/00

CPC classification number: G11C16/3431 ,  G11C16/3418

Abstract: A method (1110a;1110b) of refreshing an electrically erasable and programmable non-volatile memory (100) having a plurality of memory cells (Mhk) is proposed. The method includes the steps of: verifying (1106-1114; 1152-1162) whether a memory cell has drifted from a correct condition (i.e., a predetermined voltage and/or voltage range), and individually restoring (1116-1130) the correct condition of the memory cell if the result of the verification is positive.

Abstract translation: 提出了刷新具有多个存储单元（Mhk）的电可擦除可编程非易失性存储器（100）的方法（1110a; 1110b）。 该方法包括以下步骤：验证（1106-1114; 1152-1162）存储器单元是否已经从正确的状态漂移（即，预定的电压和/或电压范围），并且单独地恢复（1116-1130）正确的 验证结果为正的存储单元条件。