公开(公告)号：US20210062361A1

公开(公告)日：2021-03-04

申请号：US17009533

申请日：2020-09-01

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ruggero ANZALONE ,  Nicolo' FRAZZETTO ,  Francesco LA VIA

IPC: C30B25/12 ,  C30B29/36 ,  C23C16/32 ,  C23C16/458

Abstract: An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

公开(公告)号：US20220172949A1

公开(公告)日：2022-06-02

申请号：US17534156

申请日：2021-11-23

Applicant: STMicroelectronics S.r.l.

Inventor： Ruggero ANZALONE ,  Francesco LA VIA

IPC: H01L21/02 ,  H01L21/67

Abstract: A production process of a SiC wafer carried out in a same reaction chamber includes forming, on a support, a first SiC layer. The support is separated from the first SiC layer. A second SiC layer is grown on the first SiC layer, which includes introducing into the reaction chamber a precursor in the gaseous phase of a first dopant having a first electrical conductivity to generate a first stress in the second SiC layer, and introducing into the reaction chamber a precursor in the gaseous phase of a second dopant having a second electrical conductivity opposite to the first electrical conductivity, to generate a second stress in the second SiC layer that is opposite to, and balances, the first stress. The SiC wafer is thus without effects of warpage.