公开(公告)号：US20230005848A1

公开(公告)日：2023-01-05

申请号：US17944983

申请日：2022-09-14

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo COLPANI ,  Samuele SCIARRILLO ,  Ivan VENEGONI ,  Francesco Maria PIPIA ,  Simone BOSSI ,  Carmela CUPETA

IPC: H01L23/00 ,  H01L23/528 ,  H01L21/02 ,  H01L21/768

Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.

公开(公告)号：US20200051935A1

公开(公告)日：2020-02-13

申请号：US16535029

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Michele MOLGG ,  Cosimo CIMINELLI ,  Paolo COLPANI ,  Samuele SCIARRILLO ,  Ivan VENEGONI ,  Francesco Maria PIPIA ,  Simone BOSSI ,  Carmela CUPETA

IPC: H01L23/00 ,  H01L21/768 ,  H01L23/528 ,  H01L21/02

Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.