公开(公告)号：US20220108975A1

公开(公告)日：2022-04-07

申请号：US17492356

申请日：2021-10-01

申请人： STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS S.r.l.

发明人： Cristina MANOLA ,  Rosa Lucia TORRISI ,  Simone RASCUNÀ ,  Gabriele BELLOCCHI ,  Annalinda CONTINO ,  Giuseppe MACCARRONE

IPC分类号： H01L23/00 ,  H01L23/495 ,  B22F9/24 ,  B22F1/00

摘要： The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200° C. and in some embodiments at about 150° C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.