公开(公告)号：US20140167167A1

公开(公告)日：2014-06-19

申请号：US14096509

申请日：2013-12-04

Applicant: STMICROELECTRONICS SA

Inventor： Frederic HASBANI ,  Eric Remond

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L29/78648

Abstract: An integrated cell may include an nMOS transistor, and an pMOS transistor. The cell may be produced in fully depleted silicon-on-insulator technology, and it is possible for the substrates of the transistors of the cell to be biased with the same adjustable biasing voltage.

Abstract translation: 集成单元可以包括nMOS晶体管和pMOS晶体管。 电池可以在完全耗尽的绝缘体上的技术中制造，并且可以以相同的可调偏置电压来偏置电池的晶体管的衬底。