公开(公告)号：US20150253523A1

公开(公告)日：2015-09-10

申请号：US14637559

申请日：2015-03-04

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert MANOUVRIER ,  Estelle Batail

IPC: G02B6/42 ,  H01L21/768 ,  H01L49/02 ,  G02B6/13

CPC classification number: G02B6/4275 ,  G02B6/13 ,  G02F1/025 ,  G02F2202/22 ,  H01L21/768 ,  H01L27/0248 ,  H01L28/40

Abstract: An ESD protection device for an electro-optical device may include an optical waveguide segment being in semiconductor material and including a central zone of a first conductivity type, and first and second wings of a second conductivity type different from the first conductivity type and being integral with the central zone. The ESD protection device may include a first conduction terminal on the first wing for defining a first protection terminal, a second conduction terminal on the second wing for defining a second protection terminal, and a resistive contact structure of the first conductivity type having a transverse arm integral with the central zone, and an end in ohmic contact with the first conduction terminal, the resistive contact structure being electrically insulated from the first wing.

Abstract translation: 用于电光装置的ESD保护装置可以包括半导体材料中的光波导段，并且包括第一导电类型的中心区，以及不同于第一导电类型的第二导电类型的第一和第二翼， 与中央区。 ESD保护装置可以包括在第一翼上的用于限定第一保护端子的第一导电端子，用于限定第二保护端子的第二机翼上的第二导电端子，以及具有横臂的第一导电类型的电阻接触结构 与中心区域成一体，并且与第一导电端子欧姆接触的端部，电阻接触结构与第一机翼电绝缘。

公开(公告)号：US09423580B2

公开(公告)日：2016-08-23

申请号：US14637559

申请日：2015-03-04

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert Manouvrier ,  Estelle Batail

IPC: G02F1/01 ,  G02F1/035 ,  G02F1/295 ,  G02B6/12 ,  G02B6/10 ,  G02B6/42 ,  G02B6/13 ,  H01L21/768 ,  H01L49/02 ,  G02F1/025 ,  H01L27/02

CPC classification number: G02B6/4275 ,  G02B6/13 ,  G02F1/025 ,  G02F2202/22 ,  H01L21/768 ,  H01L27/0248 ,  H01L28/40

Abstract: An ESD protection device for an electro-optical device may include an optical waveguide segment being in semiconductor material and including a central zone of a first conductivity type, and first and second wings of a second conductivity type different from the first conductivity type and being integral with the central zone. The ESD protection device may include a first conduction terminal on the first wing for defining a first protection terminal, a second conduction terminal on the second wing for defining a second protection terminal, and a resistive contact structure of the first conductivity type having a transverse arm integral with the central zone, and an end in ohmic contact with the first conduction terminal, the resistive contact structure being electrically insulated from the first wing.

Abstract translation: 用于电光装置的ESD保护装置可以包括半导体材料中的光波导段，并且包括第一导电类型的中心区，以及不同于第一导电类型的第二导电类型的第一和第二翼， 与中央区。 ESD保护装置可以包括在第一翼上的用于限定第一保护端子的第一导电端子，用于限定第二保护端子的第二机翼上的第二导电端子，以及具有横臂的第一导电类型的电阻接触结构 与中心区域成一体，并且与第一导电端子欧姆接触的端部，电阻接触结构与第一机翼电绝缘。

公开(公告)号：US09523815B2

公开(公告)日：2016-12-20

申请号：US14638292

申请日：2015-03-04

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert Manouvrier ,  Estelle Batail

IPC: G02B6/42 ,  G02B6/122 ,  H01L29/74 ,  H01L27/02

CPC classification number: G02B6/122 ,  G02B6/4275 ,  G02B6/4295 ,  H01L27/0248 ,  H01L29/74

Abstract: A thyristor may include a first optical waveguide segment in a semiconductor material, having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. The thyristor may further include a second optical waveguide segment in a semiconductor material, adjacent the first waveguide segment and having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. A transverse bipolar junction may be between the second longitudinal portions of the first and second waveguide segments. An electrical insulator may separate each of the first longitudinal portions from the waveguide segment adjacent thereto.

Abstract translation: 晶闸管可以包括半导体材料中的第一光波导段，其具有构造为在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 晶闸管可以进一步包括半导体材料中的第二光波导段，邻近第一波导段并且具有构造成在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 横向双极结可以在第一和第二波导段的第二纵向部分之间。 电绝缘体可以将每个第一纵向部分与与其相邻的波导段分开。

公开(公告)号：US20150279834A1

公开(公告)日：2015-10-01

申请号：US14638292

申请日：2015-03-04

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert MANOUVRIER ,  Estelle Batail

IPC: H01L27/02 ,  G02B6/122

CPC classification number: G02B6/122 ,  G02B6/4275 ,  G02B6/4295 ,  H01L27/0248 ,  H01L29/74

Abstract: A thyristor may include a first optical waveguide segment in a semiconductor material, having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. The thyristor may further include a second optical waveguide segment in a semiconductor material, adjacent the first waveguide segment and having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. A transverse bipolar junction may be between the second longitudinal portions of the first and second waveguide segments. An electrical insulator may separate each of the first longitudinal portions from the waveguide segment adjacent thereto.

Abstract translation: 晶闸管可以包括半导体材料中的第一光波导段，其具有构造为在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 晶闸管可以进一步包括半导体材料中的第二光波导段，邻近第一波导段并且具有构造成在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 横向双极结可以在第一和第二波导段的第二纵向部分之间。 电绝缘体可以将每个第一纵向部分与与其相邻的波导段分开。