公开(公告)号：US20240405146A1

公开(公告)日：2024-12-05

申请号：US18799088

申请日：2024-08-09

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Antonin ZIMMER ,  Dominique GOLANSKI ,  Raul Andres BIANCHI

IPC: H01L31/107

Abstract: A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.

公开(公告)号：US20220310867A1

公开(公告)日：2022-09-29

申请号：US17702186

申请日：2022-03-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Antonin ZIMMER ,  Dominique GOLANSKI ,  Raul Andres BIANCHI

IPC: H01L31/107

Abstract: A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.