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1.发明公开公开(公告)号：US20240194815A1
公开(公告)日：2024-06-13
申请号：US18588656
申请日：2024-02-27
Inventor： Denis RIDEAU , Dominique GOLANSKI , Alexandre LOPEZ , Gabriel MUGNY
IPC: H01L31/107 , H01L31/18
CPC classification number: H01L31/107 , H01L31/186
Abstract: A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.
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公开(公告)号：US20240405146A1
公开(公告)日：2024-12-05
申请号：US18799088
申请日：2024-08-09
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Antonin ZIMMER , Dominique GOLANSKI , Raul Andres BIANCHI
IPC: H01L31/107
Abstract: A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.
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公开(公告)号：US20240014342A1
公开(公告)日：2024-01-11
申请号：US18220082
申请日：2023-07-10
Inventor： Sara PELLEGRINI , Dominique GOLANSKI , Alexandre LOPEZ
IPC: H01L31/107 , H01L31/02 , H01L21/762 , H01L31/0352
CPC classification number: H01L31/107 , H01L31/02027 , H01L21/76232 , H01L31/035281 , H01L27/1446
Abstract: A device includes a single photon avalanche diode in a substrate and a resistor. The resistor is provided resting on an insulating trench located in a doped anode region of the single photon avalanche diode.
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Patent Agency Ranking
公开(公告)号：US20220310867A1
公开(公告)日：2022-09-29
申请号：US17702186
申请日：2022-03-23
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Antonin ZIMMER , Dominique GOLANSKI , Raul Andres BIANCHI
IPC: H01L31/107
Abstract: A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.
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公开(公告)号：US20240014341A1
公开(公告)日：2024-01-11
申请号：US18220069
申请日：2023-07-10
Inventor： Isobel NICHOLSON , Sara PELLEGRINI , Dominique GOLANSKI , Alexandre LOPEZ
IPC: H01L31/107 , H01L27/146 , H01L31/02 , H01L31/0352
CPC classification number: H01L31/107 , H01L27/14643 , H01L31/02027 , H01L27/1463 , H01L31/035281
Abstract: A device includes a single photon avalanche diode in a portion of a substrate, wherein the portion has an octagonal profile. The octagonal profile is delimited by a wall forming an octagonal contour around the portion. The device further includes an array of diodes, wherein each diode is located in a corner between four adjacent single photon avalanche diodes. Each single photon avalanche diode further includes a doped anode region. A shallow trench isolation is formed in each doped anode region. A polysilicon line forming a resistor is supported at the upper surface of the shallow trench isolation.
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公开(公告)号：US20230178677A1
公开(公告)日：2023-06-08
申请号：US18147566
申请日：2022-12-28
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Younes BENHAMMOU , Dominique GOLANSKI , Denis RIDEAU
IPC: H01L31/107 , H01L31/028 , H01L31/0745 , H01L31/18
CPC classification number: H01L31/107 , H01L31/0284 , H01L31/0745 , H01L31/1812
Abstract: The present disclosure relates to a photodiode comprising a first part made of silicon and a second part made of doped germanium lying on and in contact with the first part, the first part comprising a stack of a first area and of a second area forming a p-n junction and the doping level of the germanium increasing as the distance from the p-n junction increases.
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7.发明申请公开(公告)号：US20220190184A1
公开(公告)日：2022-06-16
申请号：US17546503
申请日：2021-12-09
Inventor： Denis RIDEAU , Dominique GOLANSKI , Alexandre LOPEZ , Gabriel MUGNY
IPC: H01L31/107 , H01L31/18
Abstract: A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.
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公开(公告)号：US20180374983A1
公开(公告)日：2018-12-27
申请号：US16008613
申请日：2018-06-14
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Dominique GOLANSKI , Jean JIMENEZ , Didier DUTARTRE , Olivier GONNARD
IPC: H01L31/18 , H01L31/107 , H01L29/66 , H01L21/265
Abstract: A method for manufacturing a SPAD photodiode starts with the delimitation of a formation area for the SPAD photodiode in a layer of semiconductor material that is doped with a first dopant type. Dopant of a second dopant type is implanted in the layer of semiconductor material to form a buried region within the formation area. An epitaxial layer is then grown on the layer of semiconductor material at least over the formation area. MOS transistors are then formed on and in the epitaxial layer at locations outside of the formation area.
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