公开(公告)号：US10684251B2

公开(公告)日：2020-06-16

申请号：US15631078

申请日：2017-06-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Getenet Tesega Ayele ,  Stephane Monfray

IPC: G01N27/414

Abstract: A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnitude and a first polarity for application to the first bias voltage node. The bias voltage generator circuit is further configured to generate a control gate voltage having a second magnitude and a second polarity for application to the second bias voltage node. The second polarity is opposite the first polarity.

公开(公告)号：US20180372679A1

公开(公告)日：2018-12-27

申请号：US15631078

申请日：2017-06-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Getenet Tesega Ayele ,  Stephane Monfray

IPC: G01N27/414

CPC classification number: G01N27/4148

Abstract: A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnitude and a first polarity for application to the first bias voltage node. The bias voltage generator circuit is further configured to generate a control gate voltage having a second magnitude and a second polarity for application to the second bias voltage node. The second polarity is opposite the first polarity.

公开(公告)号：US10794856B2

公开(公告)日：2020-10-06

申请号：US16275051

申请日：2019-02-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Getenet Tesega Ayele ,  Stephane Monfray

IPC: G01N27/414 ,  H01L23/522 ,  G01N27/416 ,  H01L21/768 ,  H01L29/423

Abstract: A detection stage of an electronic detection device, for example a pH meter, includes an insulating region that receives an element to be analyzed. The insulating region is positioned on a sensing conductive region. A biasing stage includes an electrically conductive region which is capacitively coupled to the conductive region. The electrically conductive region is formed in an uppermost metallization level along with a further conductive region. That further conductive region is electrically connected to the sensing conductive region by a via passing through an insulating layer which insulates the electrically conductive region from the sensing conductive region.