公开(公告)号：US20190267473A1

公开(公告)日：2019-08-29

申请号：US16407383

申请日：2019-05-09

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Guillaume C. RIBES

IPC: H01L29/66 ,  H01L29/78 ,  H01L49/00 ,  H01L29/12 ,  H01L21/28 ,  H01L21/02 ,  H01L29/423

Abstract: A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.