公开(公告)号：US20230058720A1

公开(公告)日：2023-02-23

申请号：US17885406

申请日：2022-08-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvie DEL MEDICO ,  Jean-Christophe GRENIER ,  Jean-Christophe GIRAUDIN ,  Philippe KOWALCZYK ,  Fausto PIAZZA

IPC: H01L23/00 ,  H01L21/027

Abstract: The present description relates to a method of manufacturing an interconnection structure of an integrated circuit intended to be encapsulated in an encapsulation resin in contact with a first surface of a protection layer. The protection layer is resting on a first surface of the interconnection structure. The interconnection structure comprising copper interconnection elements extending at least partly through an insulating layer and flush with the first surface of said interconnection structure. The manufacturing method includes a step of structuring of the protection layer or a step of forming of the protection layer with a structuring. The structuring step or the forming step is adapted to structuring the first surface of the protection layer in the form of an alternation of ridges and troughs.