公开(公告)号：US20230128033A1

公开(公告)日：2023-04-27

申请号：US17964350

申请日：2022-10-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Julien BORREL ,  Alexis GAUTHIER ,  Fanny HILARIO ,  Ludovic BERTHIER ,  Paul DUMAS ,  Edoardo BREZZA

IPC: H01L21/266 ,  H01L29/06

Abstract: According to one aspect provision is made of a method for ion implantation in a semiconductor wafer placed in an implantation chamber under vacuum, the semiconductor wafer having an integrated circuit area and a peripheral area around this integrated circuit area, the ion implantation allowing to apply a doping in regions, called implantation regions, of the integrated circuit area, the method comprising: forming a photosensitive resin coating serving as a mask on the semiconductor wafer, then forming openings in the photosensitive resin coating at said implantation regions of the integrated circuit area and at least at one region of the peripheral area, then implanting ions in the semiconductor wafer.