公开(公告)号：US20220231483A1

公开(公告)日：2022-07-21

申请号：US17715509

申请日：2022-04-07

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Mathias PROST ,  Moustafa EL KURDI ,  Philippe BOUCAUD ,  Frederic BOEUF

IPC: H01S5/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/227 ,  H01S5/30 ,  H01S5/10

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

公开(公告)号：US20200266609A1

公开(公告)日：2020-08-20

申请号：US16867666

申请日：2020-05-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Mathias PROST ,  Moustafa EL KURDI ,  Philippe BOUCAUD ,  Frederic BOEUF

IPC: H01S5/32 ,  H01S5/10 ,  H01S5/30 ,  H01S5/227 ,  H01S5/042 ,  H01S5/02

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.