公开(公告)号：US11329455B2

公开(公告)日：2022-05-10

申请号：US16867666

申请日：2020-05-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Mathias Prost ,  Moustafa El Kurdi ,  Philippe Boucaud ,  Frederic Boeuf

IPC: H01S5/227 ,  H01S5/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/30 ,  H01S5/10 ,  G02B6/136 ,  G02B6/12 ,  G02B6/10

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

公开(公告)号：US20210119416A1

公开(公告)日：2021-04-22

申请号：US16757308

申请日：2017-10-19

Applicant: STMicroelectronics (Crolles 2) SAS ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  Universite Paris-Saclay

Inventor： Anas Elbaz ,  Moustafa El Kurdi ,  Abdelhanin Aassime ,  Philippe Boucaud ,  Frederic Boeuf

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/30 ,  H01S5/024

Abstract: A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.

公开(公告)号：US11165220B2

公开(公告)日：2021-11-02

申请号：US16757308

申请日：2017-10-19

Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  STMicroelectronics (Crolles 2) SAS ,  Universite Paris-Saclay

Inventor： Anas Elbaz ,  Moustafa El Kurdi ,  Abdelhanin Aassime ,  Philippe Boucaud ,  Frederic Boeuf

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/02 ,  H01S5/10 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34

Abstract: A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.

公开(公告)号：US10686297B2

公开(公告)日：2020-06-16

申请号：US15555639

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  Centre National de la Recherche Scientifique ,  Universite Paris SUD

Inventor： Mathias Prost ,  Moustafa El Kurdi ,  Philippe Boucaud ,  Frederic Boeuf

IPC: H01S5/10 ,  G02B6/12 ,  H01S5/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/227 ,  H01S5/30 ,  G02B6/136 ,  G02B6/10

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

公开(公告)号：US20180048123A1

公开(公告)日：2018-02-15

申请号：US15555639

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  Centre National de la Recherche Scientifique ,  Universite Paris SUD

Inventor： Mathias Prost ,  Moustafa El Kurdi ,  Philippe Boucaud ,  Frederic Boeuf

IPC: H01S5/32 ,  H01S5/30 ,  H01S5/227 ,  H01S5/02 ,  H01S5/042

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.