公开(公告)号：US12034046B2

公开(公告)日：2024-07-09

申请号：US17851872

申请日：2022-06-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Nicolas Guitard

IPC: H01L29/08 ,  H01L27/02 ,  H01L27/102 ,  H01L29/167 ,  H01L29/66 ,  H01L29/74

CPC classification number: H01L29/083 ,  H01L27/0248 ,  H01L27/1027 ,  H01L29/167 ,  H01L29/66363 ,  H01L29/74

Abstract: Thyristor semiconductor device comprising an anode region, a first base region and a second base region having opposite types of conductivity, and a cathode region, all superimposed along a vertical axis.