公开(公告)号：US20210074749A1

公开(公告)日：2021-03-11

申请号：US17011900

申请日：2020-09-03

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Thomas DALLEAU

IPC: H01L27/146 ,  H04N5/3745

Abstract: A pixel includes a photodiode and first and second transistors, the first and second transistors being coupled in series. One of the first and second transistors is a P channel transistor and the other is an N channel transistor. An electronic device may include one or more of the pixels.

公开(公告)号：US20240380999A1

公开(公告)日：2024-11-14

申请号：US18781479

申请日：2024-07-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois ROY ,  Thomas DALLEAU

IPC: H04N25/77 ,  H04N25/75

Abstract: An image sensor includes a pixel array where each pixel is formed in a portion of a substrate electrically insulated from other portions of the substrate. Each pixel includes a photodetector; a transfer transistor; and a readout circuit comprising one or a plurality of transistors. The transistors of the readout circuit are formed inside and on top of at least one well of the portion. The reading from the photodetector of a pixel of a current row uses at least one transistor of the readout circuit of a pixel of at least one previous row, the well of the pixel of the previous row being biased with a first voltage greater than a second bias voltage of the well of the pixel of the current row.

公开(公告)号：US20230164459A1

公开(公告)日：2023-05-25

申请号：US17986505

申请日：2022-11-14

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois ROY ,  Thomas DALLEAU

IPC: H04N5/3745 ,  H04N5/378

CPC classification number: H04N5/3745 ,  H04N5/378

Abstract: An image sensor includes a pixel array where each pixel is formed in a portion of a substrate electrically insulated from other portions of the substrate. Each pixel includes a photodetector; a transfer transistor; and a readout circuit comprising one or a plurality of transistors. The transistors of the readout circuit are formed inside and on top of at least one well of the portion. The reading from the photodetector of a pixel of a current row uses at least one transistor of the readout circuit of a pixel of at least one previous row, the well of the pixel of the previous row being biased with a first voltage greater than a second bias voltage of the well of the pixel of the current row.