公开(公告)号：US20130201347A1

公开(公告)日：2013-08-08

申请号：US13759866

申请日：2013-02-05

Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics, Inc.

Inventor： David Coulon ,  Darin K. Winterton

IPC: H04N5/232

CPC classification number: H04N5/23296 ,  G06F3/017 ,  G06K9/209

Abstract: A user presence detection device includes a camera module with a silicon-based image sensor adapted to capture an image and a processing device configured to process the image to detect the presence of a user. The camera module further includes a light filter having a lower cut-off wavelength of between 550 nm and 700 nm and a higher cut-off wavelength of between 900 nm and 1100 nm.

Abstract translation: 用户存在检测装置包括具有适于捕获图像的硅基图像传感器的相机模块和被配置为处理图像以检测用户的存在的处理装置。 相机模块还包括具有550nm至700nm之间的较低截止波长和900nm至1100nm之间的较高截止波长的滤光器。

公开(公告)号：US09998689B2

公开(公告)日：2018-06-12

申请号：US14557158

申请日：2014-12-01

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS ,  STMicroelectronics SA

Inventor： David Coulon ,  Benoit Deschamps ,  Frederic Barbier

IPC: H01L21/00 ,  H04N5/345 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/345 ,  H01L27/14605 ,  H01L27/14647 ,  H01L27/14689 ,  H04N5/378

Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.

公开(公告)号：US20150083894A1

公开(公告)日：2015-03-26

申请号：US14557158

申请日：2014-12-01

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS ,  STMicroelectronics SA

Inventor： David Coulon ,  Benoit Deschamps ,  Frederic Barbier

IPC: H04N5/345 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/345 ,  H01L27/14605 ,  H01L27/14647 ,  H01L27/14689 ,  H04N5/378

Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.

Abstract translation: 成像装置包括在半导体衬底中形成的至少一个光电子，并装配有用于过滤至少一个不需要的辐射的过滤装置。 过滤装置以取决于不需要的辐射的波长的深度埋在半导体衬底中。