公开(公告)号：US11817484B2

公开(公告)日：2023-11-14

申请号：US17935754

申请日：2022-09-27

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS (ROUSSET) SAS

Inventor： Franck Julien ,  Stephan Niel ,  Leo Gave

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/401 ,  H01L29/518 ,  H01L29/6634

Abstract: A method for manufacturing an electronic device includes locally implanting ionic species into a first region of a silicon nitride layer and into a first region of an electrically insulating layer located under the first region of the silicon nitride layer. A second region of the silicon nitride layer and a region of the electrically insulating layer located under the second region of the silicon nitride layer are protected from the implantation. The electrically insulating layer is disposed between a semi-conducting substrate and the silicon nitride layer. At least one trench is formed extending into the semi-conducting substrate through the silicon nitride layer and the electrically insulating layer. The trench separates the first region from the second region of the electrically insulating layer. The electrically insulating layer is selectively etched, and the etch rate of the electrically insulating layer in the first region is greater than the etch rate in the second region.

公开(公告)号：US11522057B2

公开(公告)日：2022-12-06

申请号：US17100559

申请日：2020-11-20

Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics (Crolles 2) SAS

Inventor： Franck Julien ,  Stephan Niel ,  Leo Gave

IPC: H01L29/40 ,  H01L29/51 ,  H01L29/66

Abstract: A method for manufacturing an electronic device includes locally implanting ionic species into a first region of a silicon nitride layer and into a first region of an electrically insulating layer located under the first region of the silicon nitride layer. A second region of the silicon nitride layer and a region of the electrically insulating layer located under the second region of the silicon nitride layer are protected from the implantation. The electrically insulating layer is disposed between a semi-conducting substrate and the silicon nitride layer. At least one trench is formed extending into the semi-conducting substrate through the silicon nitride layer and the electrically insulating layer. The trench separates the first region from the second region of the electrically insulating layer. The electrically insulating layer is selectively etched, and the etch rate of the electrically insulating layer in the first region is greater than the etch rate in the second region.