公开(公告)号：US20240088885A1

公开(公告)日：2024-03-14

申请号：US18370582

申请日：2023-09-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Jean-Michel SIMONNET ,  Fabrice GUITTON

IPC: H03K17/0812

CPC classification number: H03K17/0812 ,  H02P27/04

Abstract: A control circuit for controlling a first transistor includes a diode for suppressing transient voltages. A cathode of the diode is coupled to a first conduction terminal of the first transistor, and an anode of the diode is coupled to a first node. A first resistor is coupled between the first node and a control terminal of the first transistor. A second transistor has a control terminal coupled to the first node, a first conduction terminal configured to receive a first supply voltage, and a second conduction terminal coupled to the control terminal of the first transistor.