公开(公告)号：US20230178380A1

公开(公告)日：2023-06-08

申请号：US18153929

申请日：2023-01-12

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Michael DE CRUZ ,  Olivier ORY

IPC: H01L21/48 ,  H01L21/56

CPC classification number: H01L21/4853 ,  H01L21/56

Abstract: A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.

公开(公告)号：US20230068222A1

公开(公告)日：2023-03-02

申请号：US17896707

申请日：2022-08-26

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Olivier ORY ,  Michael DE CRUZ

IPC: H01L23/31 ,  H01L23/00

Abstract: The present disclosure relates to a method for manufacturing electronic chips comprising, in order: a. forming metal contacts on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits have been previously formed; b. depositing a first protective resin on the metal contacts and the first face of the semiconductor substrate; c. forming first trenches of a first width on the side of a second face of the semiconductor substrate; d. depositing a second protective resin in the first trenches and on the second face of the semiconductor substrate; e. forming second trenches of a second width, less than the first width, opposite the first trenches up to the metal contacts; and f. forming third trenches opposite the second trenches, the third trenches extending through the metal contacts.

公开(公告)号：US20220375840A1

公开(公告)日：2022-11-24

申请号：US17744397

申请日：2022-05-13

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Olivier ORY ,  Michael DE CRUZ

IPC: H01L23/498 ,  H01L23/00

Abstract: The present disclosure relates to an electronic chip comprising a semiconductor substrate carrying at least one metal contact extending, within the thickness of the substrate, along at least one flank of the chip.

公开(公告)号：US20210175094A1

公开(公告)日：2021-06-10

申请号：US17104869

申请日：2020-11-25

Applicant: STMicroelectronics (Tours) SAS

Inventor： Michael DE CRUZ ,  Olivier ORY

IPC: H01L21/48 ,  H01L21/56

Abstract: A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.