公开(公告)号：US11532606B2

公开(公告)日：2022-12-20

申请号：US16806257

申请日：2020-03-02

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics S.r.l.

Inventor： Jean-Michel Simonnet ,  Sophie Ngo ,  Simone Rascunà

IPC: H01L27/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/868 ,  H02H9/04

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.