公开(公告)号：US20240313102A1

公开(公告)日：2024-09-19

申请号：US18596536

申请日：2024-03-05

申请人： STMicroelectronics International N.V.

发明人： Cristina MICCOLI ,  Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Maria Eloisa CASTAGNA ,  Alessandro CHINI

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462

摘要： An integrated power device includes a heterostructure, having a channel layer and a barrier layer, a source contact, a drain contact, and a gate region, arranged on the barrier layer between the source contact and the drain contact. An insulating field structure is arranged on the barrier layer between the gate region and the drain contact. A field plate extends over the insulating field structure. The insulating field structure includes a first dielectric region made of a first dielectric material on the barrier layer and a second dielectric region made of a second dielectric material, selectively etchable with respect to the first dielectric material on the first dielectric region. On a side of the insulating field structure towards the gate region, the field plate is in contact with the first dielectric region.

公开(公告)号：US20240332413A1

公开(公告)日：2024-10-03

申请号：US18612646

申请日：2024-03-21

申请人： STMicroelectronics International N.V.

发明人： Ferdinando IUCOLANO ,  Alessandro CHINI ,  Maria Eloisa CASTAGNA ,  Aurore CONSTANT ,  Cristina TRINGALI

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462

摘要： The HEMT device has a body including a heterostructure configured to generate a 2-dimensional charge-carrier gas; and a gate structure which extends on a top surface of the body and is biasable to electrically control the 2-dimensional charge-carrier gas. The gate structure has a channel modulating region of semiconductor material; a functional region of semiconductor material; and a gate contact region of conductive material. The functional region and the gate contact region extend on a top surface of the channel modulating region and the gate contact region is arranged laterally with respect to the functional region. The channel modulating region has a different conductivity type with respect to the functional region.