公开(公告)号：US20240387328A1

公开(公告)日：2024-11-21

申请号：US18319132

申请日：2023-05-17

Applicant: STMicroelectronics International N.V.

Inventor： Pascal Fornara ,  Antonin Chollet ,  Julien Amouroux

IPC: H01L23/48 ,  H01L21/764 ,  H01L21/768 ,  H01L29/06

Abstract: A method for manufacturing a semiconductor device includes depositing a first protective layer over a first conductive feature and a second conductive feature. The first protective layer covers respective sidewalls and top surfaces of the first conductive feature and the second conductive feature. A portion of the first protective layer between the first conductive feature and the second conductive feature is removed. After removing the portion of the first protective layer, an intermetal dielectric layer is formed between the first conductive feature and the second conductive feature.

公开(公告)号：US20240379415A1

公开(公告)日：2024-11-14

申请号：US18659205

申请日：2024-05-09

Applicant: STMicroelectronics International N.V.

Inventor： Pascal Fornara ,  Christian Rivero ,  Julien Amouroux ,  Antonin Chollet

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: The present disclosure relates to a method for manufacturing a contact on a semiconductor region of an electronic component. The method includes forming a coating layer of dielectric material, with a thickness, on at least one side wall of an opening crossing through a dielectric region of the electronic component along a longitudinal direction from a first surface of the dielectric region, and opening out at the semiconductor region. The method includes forming of a metal filler layer, so as to fill the opening coated with the coatin