公开(公告)号：US20240379415A1

公开(公告)日：2024-11-14

申请号：US18659205

申请日：2024-05-09

Applicant: STMicroelectronics International N.V.

Inventor： Pascal Fornara ,  Christian Rivero ,  Julien Amouroux ,  Antonin Chollet

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: The present disclosure relates to a method for manufacturing a contact on a semiconductor region of an electronic component. The method includes forming a coating layer of dielectric material, with a thickness, on at least one side wall of an opening crossing through a dielectric region of the electronic component along a longitudinal direction from a first surface of the dielectric region, and opening out at the semiconductor region. The method includes forming of a metal filler layer, so as to fill the opening coated with the coatin