公开(公告)号：US20240204127A1

公开(公告)日：2024-06-20

申请号：US18540625

申请日：2023-12-14

Applicant: STMicroelectronics International N.V.

Inventor： Antonin ZIMMER ,  Dominique GOLANSKI ,  Sebastien PLACE ,  Guillaume MARCHAND

IPC: H01L31/107 ,  H01L21/763 ,  H01L31/0288 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L21/763 ,  H01L31/0288 ,  H01L31/1804

Abstract: The present description concerns an avalanche photodiode comprising: a main PN junction adapted to being reverse-biased; and a plurality of semiconductor regions including at least: a first epitaxial semiconductor region of a first conductivity type; and a second semiconductor region of the second conductivity type, said second region being arranged to at least partially surround the first region, and comprising surfaces in contact with surfaces of said first region. The present description also concerns a method of manufacturing such a photodiode.