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公开(公告)号：US20240332406A1
公开(公告)日：2024-10-03
申请号：US18610829
申请日：2024-03-20
Applicant: STMicroelectronics International N.V.
Inventor： Alexis GAUTHIER , Pascal CHEVALIER , Olivier WEBER , Franck ARNAUD
IPC: H01L29/739 , H01L29/66
CPC classification number: H01L29/7394 , H01L29/66325
Abstract: A bipolar transistor includes a first PN junction and a second PN junction. A first gate is located on the first PN junction. A second gate is located on the second PN junction.
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