公开(公告)号：US20250075370A1

公开(公告)日：2025-03-06

申请号：US18811164

申请日：2024-08-21

Applicant: STMicroelectronics International N.V.

Inventor： Björn MAGNUSSON LINDGREN ,  Mathias ISACSON

IPC: C30B29/36 ,  C30B25/18

Abstract: A structure including a base portion (e.g., made of a graphite-based or graphene-based material) with at least one surface that is coated with a homogenous coating layer (e.g., made of silicon-carbide (SiC)). The homogenous coating layer prevents contaminants (e.g., carbon) from being released by the base portion into a cavity of a processing tool when heated to process one or more workpieces (e.g., silicon substrate, silicon wafers, etc.) present within the cavity. The homogenous coating layer includes grains and grain boundaries that are relatively the same size and shape as each other, which further prevents propagation of defects (e.g., cracking, peeling, etc.) that could potentially cause exposure of a region of the first surface of the base portion to the cavity of the processing tool contaminating the one or more workpieces present within the cavity of the processing tool.