公开(公告)号：US20240355913A1

公开(公告)日：2024-10-24

申请号：US18637047

申请日：2024-04-16

Applicant: STMicroelectronics International N.V.

Inventor： Pascal CHEVALIER ,  Nicolas GUITARD

IPC: H01L29/732 ,  H01L27/06 ,  H01L29/66

CPC classification number: H01L29/732 ,  H01L27/0623 ,  H01L29/66272

Abstract: An electronic device includes a bipolar transistor. A collector of the bipolar transistor is formed by first and second regions. The second region is located between the first region and a base of the bipolar transistor. A conductive element at least partially surrounds and is insulated from the second region. The conductive element is located between the first region and the base.