METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

    公开(公告)号:US20240363584A1

    公开(公告)日:2024-10-31

    申请号:US18637865

    申请日:2024-04-17

    Abstract: Semiconductor dice are arranged onto a first surface of a common electrically conductive substrate. The common electrically conductive substrate has a second surface opposite the first surface and includes substrate portions and elongated sacrificial connecting bars extending between adjacent substrate portions. Insulating material is coated on the second surface of the elongate sacrificial connecting bars. Solder material is grown on the second surface of the common electrically conductive substrate. The insulating material counters growth of the solder material on the second surface of the elongate sacrificial connecting bars. Singulated individual semiconductor devices are provided by cutting the common electrically conductive substrate along the length of the elongate sacrificial connecting bars having the insulating material coated on its second surface.

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