公开(公告)号：US20240297240A1

公开(公告)日：2024-09-05

申请号：US18428306

申请日：2024-01-31

Applicant: STMicroelectronics International N.V.

Inventor： Voon Cheng NGWAN ,  Churn Weng YIM ,  Vincenzo ENEA

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/66734 ,  H01L29/401 ,  H01L29/407 ,  H01L29/7813

Abstract: A semiconductor substrate has a substrate trench extending from a front surface and including a lower part and an upper part. A first insulation layer lines the substrate trench, and a first conductive material is insulated from the semiconductor substrate by the first insulating layer to form a transistor field plate electrode. A gate trench in the first insulation layer defines an integral part of the first insulating layer surrounding the first conductive material in an upper part of the substrate trench. A second insulating layer lines the semiconductor substrate at the upper part of the substrate trench in the gate trench. A second conductive material fills the gate. The second conductive material forms a transistor gate electrode that is insulated from the semiconductor substrate by the second insulating layer and further insulated from the first conductive material by the integral part of the first insulating layer.

公开(公告)号：US20240405098A1

公开(公告)日：2024-12-05

申请号：US18623604

申请日：2024-04-01

Applicant: STMicroelectronics International N.V.

Inventor： Maurizio Gabriele CASTORINA ,  Voon Cheng NGWAN

IPC: H01L29/66 ,  H01L21/265 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78

Abstract: An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region in the semiconductor substrate providing a source and a second doped region buried in the semiconductor substrate providing a body. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region and a gate bridge over the polyoxide region. At a first region the gate bridge has a first thickness, and at a second region the gate bridge has a second thickness (greater than the first thickness). At the second region, a gate contact is provided at each trench to extend partially into the second thickness of the gate bridge.