公开(公告)号：US20230236161A1

公开(公告)日：2023-07-27

申请号：US18091470

申请日：2022-12-30

Applicant: STMicroelectronics PTE LTD ,  STMicroelectronics S.r.l.

Inventor： Ravi SHANKAR ,  Wei Ren Douglas LEE ,  Giuseppe BRUNO

IPC: G01N33/00 ,  G01N27/04

CPC classification number: G01N33/0027 ,  G01N27/045

Abstract: A gas sensor is formed by a thin-film semiconductor metal-oxide gas sensing layer, with a thermally conductive and electrically-insulating layer in direct physical contact with a back of the gas sensing layer to carry the gas sensing layer. Sensing circuitry applies a voltage to the gas sensing layer and measures a current flowing through the gas sensing layer. The current flowing through the gas sensing layer is indicative of whether a gas under detection has been detected by the gas sensing layer, and serves to self-heat the gas sensing layer. A support structure extends from a substrate to make direct physical contact with and carry the thermally conductive and electrically insulating layer about a perimeter of a back face thereof, with the support structure shaped to form an air gap between the back of the thermally conductive and electrically insulating layer and a front of the substrate.