公开(公告)号：US09401351B2

公开(公告)日：2016-07-26

申请号：US14610173

申请日：2015-01-30

Applicant: STMicroelectronics S.A.

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/00 ,  H01L27/02 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

CPC classification number: H01L27/0262 ,  H01L27/1027 ,  H01L27/1203 ,  H01L29/74 ,  H01L29/7408 ,  H01L29/7436 ,  H01L29/87 ,  H01L2924/1301

Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.

Abstract translation: 电子器件包括具有阳极，阴极，设置在阳极侧的第一双极晶体管的晶闸管。 第二双极晶体管设置在阴极侧。 这两个双极晶体管被嵌套并连接在阳极和阴极之间。 MOS晶体管耦合在第二双极晶体管的集电极区域和发射极区域之间。 晶体管具有通过并入第二双极晶体管的基极区的至少一部分的电阻半导体区连接到阴极的栅极区。

公开(公告)号：US20150214214A1

公开(公告)日：2015-07-30

申请号：US14610173

申请日：2015-01-30

Applicant: STMicroelectronics S.A.

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/12

CPC classification number: H01L27/0262 ,  H01L27/1027 ,  H01L27/1203 ,  H01L29/74 ,  H01L29/7408 ,  H01L29/7436 ,  H01L29/87 ,  H01L2924/1301

Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.

Abstract translation: 电子器件包括具有阳极，阴极，设置在阳极侧的第一双极晶体管的晶闸管。 第二双极晶体管设置在阴极侧。 这两个双极晶体管被嵌套并连接在阳极和阴极之间。 MOS晶体管耦合在第二双极晶体管的集电极区域和发射极区域之间。 晶体管具有通过并入第二双极晶体管的基极区的至少一部分的电阻半导体区连接到阴极的栅极区。

公开(公告)号：US09997512B2

公开(公告)日：2018-06-12

申请号：US15199454

申请日：2016-06-30

Applicant: STMicroelectronics S.A.

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L29/00 ,  H01L27/02 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

CPC classification number: H01L27/0262 ,  H01L27/1027 ,  H01L27/1203 ,  H01L29/74 ,  H01L29/7408 ,  H01L29/7436 ,  H01L29/87 ,  H01L2924/1301

Abstract: An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.