公开(公告)号：US20030006836A1

公开(公告)日：2003-01-09

申请号：US10124670

申请日：2002-04-17

Applicant: STMicroelectronics S.A.

Inventor： Bruno Pellat ,  Jean-Charles Grasset

IPC: G06G007/12

CPC classification number: H03F1/32 ,  H03F1/3211 ,  H03F2200/372

Abstract: A transconductance stage includes at least one principal bipolar transistor having a base linked to an input terminal, a collector linked to an output terminal, and an emitter linked to a supply terminal through a resistor. At least one bipolar compensation transistor is connected in parallel to the principal transistor and linked without going through the resistor to the supply terminal. The value RE of the resistance is chosen so that RE*I0>VT/2, where VT is the thermal voltage and I0 is the quiescent current of the principal transistor.

Abstract translation: 跨导级包括至少一个主要双极晶体管，其具有连接到输入端子的基极，连接到输出端子的集电极和通过电阻器连接到电源端子的发射极。 至少一个双极性补偿晶体管与主晶体管并联连接，而不通过电阻器连接到电源端子。 选择电阻的值RE，使得RE * I0> VT / 2，其中VT是热电压，I0是主晶体管的静态电流。