Method of testing a sequential access memory plane and a corresponding sequential access memory semiconductor device
    1.
    发明申请
    Method of testing a sequential access memory plane and a corresponding sequential access memory semiconductor device 有权
    测试顺序存取存储器平面和相应的顺序存取存储器半导体器件的方法

    公开(公告)号:US20020138797A1

    公开(公告)日:2002-09-26

    申请号:US10075113

    申请日:2002-02-13

    CPC classification number: G11C29/003 G11C29/38

    Abstract: The sequential access memory array is able to store p words each of n bits. Such p test words each made up of n test bits are written in the memory array, the p test words are extracted sequentially and, for each current word extracted, the n test bits that compose it are compared sequentially with n respective expected data bits before extracting the next test word.

    Abstract translation: 顺序访问存储器阵列能够存储每个n位的p个字。 每个由n个测试位组成的这些p个测试字被写入存储器阵列中,p个测试字被顺序提取,并且对于每个当前提取的单词,组成它们的n个测试位被顺序地与n个相应的预期数据位进行比较 提取下一个测试字。

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