公开(公告)号：US20020123195A1

公开(公告)日：2002-09-05

申请号：US10006778

申请日：2001-11-05

Applicant: STMicroelectronics S.r.I

Inventor： Ferruccio Frisina ,  Giuseppe Ferla ,  Salvatore Rinaudo

IPC: H01L021/336

CPC classification number: H01L29/7802 ,  H01L29/0847 ,  H01L29/66712

Abstract: A MOS-gated power device includes a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type having a first resistivity value. Under each body region a respective lightly doped region of the second conductivity type is provided having a second resistivity value higher than the first resistivity value.

Abstract translation: MOS门控功率器件包括多个基本功能单元，每个基本功能单元包括形成在具有第一电阻率值的第二导电类型的半导体材料层中的第一导电类型的体区。 在每个体区下方提供具有高于第一电阻率值的第二电阻率值的第二导电类型的相应轻掺杂区。