公开(公告)号：US20140312954A1

公开(公告)日：2014-10-23

申请号：US14256689

申请日：2014-04-18

Applicant: STMicroelectronics S.r.I.

Inventor： Davide Ugo Ghisu ,  Sandro Rossi ,  Antonio Ricciardo

IPC: H03K3/356

CPC classification number: H03K3/356113 ,  H03K5/12 ,  H03K19/00361

Abstract: A multi-level shifter includes a first branch having first and second transistors coupled between a higher voltage terminal and a lower voltage terminal. The multi-level shifter comprises a second branch, in parallel with the first branch, having: a third transistor, coupled between said higher voltage reference terminal and an output node, a fourth switching transistor coupled between said output node and said lower voltage terminal. Said third and fourth transistors have respective control terminals controlled by drain terminals of said first and second transistors, respectively. The shifter includes a bidirectional battery coupled between said drain terminals of said first and second transistors to supply first and second voltages having the same magnitude and different polarities. Said fourth transistor is controlled according to the first voltage when said first transistor is turned on and said third transistor is controlled according to the second voltage when said second transistor is turned on.

Abstract translation: 多电平移位器包括具有耦合在较高电压端子和较低电压端子之间的第一和第二晶体管的第一支路。 多电平移位器包括与第一分支并联的第二分支，具有：耦合在所述高电压参考端和输出节点之间的第三晶体管，耦合在所述输出节点和所述下电压端之间的第四开关晶体管。 所述第三和第四晶体管分别具有由所述第一和第二晶体管的漏极端子控制的各个控制端子。 移位器包括耦合在所述第一和第二晶体管的所述漏极端子之间的双向电池，以提供具有相同幅度和不同极性的第一和第二电压。 当所述第一晶体管导通时，所述第四晶体管根据所述第一电压被控制，并且当所述第二晶体管导通时，根据所述第二电压来控制所述第三晶体管。