公开(公告)号：US20040137169A1

公开(公告)日：2004-07-15

申请号：US10686556

申请日：2003-10-14

Applicant: STMicroelectronics S.r.I.

Inventor： Enzo Carollo

IPC: H05H001/24

CPC classification number: H01L21/3145 ,  C23C16/345 ,  C23C16/455 ,  C23C16/507 ,  H01L21/3144 ,  H01L21/3185

Abstract: A high-density plasma process is proposed for depositing a layer of Silicon Nitride on a substrate in a plasma reactor. The process includes the steps of: providing a gas including precursor components of the Silicon Nitride, generating a plasma applying a radio-frequency power to the gas, and the plasma reacting with the substrate to deposit the layer of Silicon Nitride. The power applied to the gas is in the range from 2.5 kW to 4 kW.

Abstract translation: 提出了一种高等离子体工艺，用于在等离子体反应器中的衬底上沉积氮化硅层。 该方法包括以下步骤：提供包括氮化硅的前体成分的气体，产生对气体施加射频功率的等离子体，并且等离子体与衬底反应以沉积氮化硅层。 施加到气体的功率在2.5kW至4kW的范围内。