公开(公告)号：US20020131303A1

公开(公告)日：2002-09-19

申请号：US10068560

申请日：2002-02-05

Applicant: STMicroelectronics S.r.I.

Inventor： Ignazio Martines ,  Luigi Buono

IPC: G11C016/04

CPC classification number: G11C16/30 ,  G11C5/145

Abstract: A charge pump for a nonvolatile memory, having a clock generator circuit supplying an output clock signal; a phase generator circuit receiving the output clock signal, and supplying phase signals; and a voltage booster circuit receiving a supply voltage supplied from outside to the nonvolatile memory and the aforesaid phase signals, and supplying a read voltage higher than the supply voltage. The clock generator circuit includes a comparator receiving the read voltage and a reference voltage, and supplying a selection signal indicating the outcome of the comparison between the read and reference voltages; and a multiplexer receiving a first input clock signal having a pre-set frequency, a second input clock signal having a frequency correlated to the transition frequency of the addresses supplied to the nonvolatile memory, and the selection signal, and supplying the aforesaid output clock signal.

Abstract translation: 一种用于非易失性存储器的电荷泵，具有提供输出时钟信号的时钟发生器电路; 接收所述输出时钟信号并提供相位信号的相位发生器电路; 以及接收从外部向非易失性存储器提供的电源电压和上述相位信号的升压电路，并提供高于电源电压的读取电压。 时钟发生器电路包括：比较器，接收读取电压和参考电压，并提供指示读取和参考电压之间的比较结果的选择信号; 以及多路复用器，其接收具有预置频率的第一输入时钟信号，具有与提供给非易失性存储器的地址的转换频率相关的频率的第二输入时钟信号和所述选择信号，以及提供所述输出时钟信号 。