公开(公告)号：US20020040995A1

公开(公告)日：2002-04-11

申请号：US09960254

申请日：2001-09-20

Applicant: STMicroelectronics S.r.I.

Inventor： Nicola Zatelli ,  Massimo Atti ,  Elisabetta Palumbo ,  Cosimo Torelli

IPC: H01L029/76 ,  H01L029/94

CPC classification number: H01L29/41725 ,  H01L29/7835

Abstract: A lateral DMOS transistor having a drain region which comprises a high-concentration portion with which the drain electrode is in contact and a low-concentration portion which is delimited by the channel region. In addition to the conventional source, drain, body and gate electrodes, the transistor has an additional electrode in contact with a point of the low-concentration portion of the drain region which is close to the channel. The additional electrode permits a direct measurement of the electric field in the gate dielectric and thus provides information which can be used both for characterizing the transistor and selecting its dimensions and for activating devices for protecting the transistor and/or other components of an integrated circuit containing the transistor.

Abstract translation: 一种具有漏极区域的横向DMOS晶体管，其包括漏电极接触的高浓度部分和由沟道区域限定的低浓度部分。 除了常规的源极，漏极，体和栅电极之外，晶体管还具有与漏极区域的靠近沟道的低浓度部分的点接触的附加电极。 附加电极允许直接测量栅极电介质中的电场，并且因此提供可以用于表征晶体管并选择其尺寸的信息，并且用于激活用于保护晶体管和/或其中包含的集成电路的其它部件的器件 晶体管。