公开(公告)号：US20130309803A1

公开(公告)日：2013-11-21

申请号：US13828170

申请日：2013-03-14

Applicant: STMicroelectronics S.r.I.

Inventor： Maria Eloisa Castagna ,  Salvatore Leonardi ,  Salvatore Abbisso ,  Lidia Maddiona

IPC: H01L31/18

CPC classification number: H01L31/18 ,  G01J1/0488 ,  G01J1/4204 ,  G01J1/4228 ,  H01L27/1443 ,  H01L31/02165

Abstract: An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on top of such a first and second photodiode. At least one antireflection coating of such a first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining for the corresponding photodiode a responsivity peak at a predetermined wavelength of an optical signal incident on the sensor. An embodiment also refers to an integration process of such a sensor, as well as to an ambient light sensor made with such a sensor.

Abstract translation: 实施例涉及集成在半导体衬底上并包括至少一个第一和第二光电二极管的传感器，该至少一个第一和第二光电二极管包括在这种半导体衬底中形成的至少一个第一和一个第二pn结，以及至少一个第一和第二反射防止涂层 这样的第一和第二光电二极管的顶部。 这种第一和第二光电二极管的至少一个抗反射涂层包括至少一个第一和第二不同的抗反射层，以制造双层抗反射涂层，其适合于为相应的光电二极管获得在入射到其上的光信号的预定波长的响应峰 传感器。 实施例还涉及这种传感器以及由这种传感器制成的环境光传感器的集成过程。